PART |
Description |
Maker |
BCR5KM |
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
|
Renesas Electronics Corporation
|
CR02AM-8A CR2AM-8A |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE GLASS PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
MJE1320 ON2011 |
SEMICONDUCTOR TECHNICAL DATA From old datasheet system POWER TRANSISTOR 2 AMPERES 900 VOLTS 80 WATTS
|
ONSEMI[ON Semiconductor] MOTOROLA[Motorola, Inc]
|
BCR5AM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
BCR8PM-18 |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
CR08AS |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
CR6CM CR6CM-8 |
CR6CM-8 CR6CM-12 Datasheet 104K/MAR.20.03 CR6CM - 8 CR6CM - 12数据104K/MAR.20.03 MITSUBISHI SEMICONDUCTOR THYRISTOR
|
Renesas Electronics Corporation
|
TMP95C265 E_030331_95CS64_SUMMARY |
16-Bit Microcontroller TLCS-900 Family: 900/H Series From old datasheet system
|
Toshiba
|
TMP93CS42A |
16-Bit Microcontroller TLCS-900 Family: 900/L Series
|
Toshiba
|
TMP93PW76 |
16-Bit Microcontroller TLCS-900 Family: 900/L Series
|
Toshiba
|
TMP93CU76 |
16-Bit Microcontroller TLCS-900 Family: 900/L Series
|
Toshiba
|
APT64GA90LD30 |
Insulated Gate Bipolar Transistor - Power MOS 8; Package: TO-264; BV(CES) (V): 900; VCE(sat) (V): 3.1; IC (A): 64; 117 A, 900 V, N-CHANNEL IGBT, TO-264AA
|
Microsemi, Corp.
|